development of spin quantum bits in soi cmos technology
| Description | |
| Date | 2018 |
| Date | |
| Auteurs | Bertrand,- B | Hutin,- L | Bourdet,- L | Corna,- A | Jadot,- B | Bohuslavskyi,- H | Crippa,- A | Maurand,- R | Barraud,- S | Urdampilleta,- M | Bauerle,- C | Meunier,- T | Sanquer,- M | Jehl,- X | De francerschi,- S | Niquet,- Ym | Vinet,- M | |
| Source | 2018 IEEE 18TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO) 2018, pages: 3 |
| Résumé | We present the recent advances made towards the realization of electron and hole quantum bit devices on a Silicon-On-Insulator (SOI) technology. Such devices are obtained by slightly modifying our standard process flow for nanowire transistor fabrication. Recent developments on electrical control of the qubits are reviewed. |
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